The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology

摘要

Compared to the difficult volatilization for germanium (IV) precursors, germanium (II) precursors usually have better volatilization but difficult to synthesize. A series of diamine germanium (II) precursors were synthesized, characterized and investigated by DFT calculations. These germanium (II) precursors were tested by TG experiments and showed excellent volatilization, which were suitable as a potential membrane material. Moreover, the Ge film was deposited on Si wafer directly and characterized by SEM. (C) 2015 Elsevier B.V. All rights reserved.