Novel Highly Volatile MOCVD Precursors for Ta_2O_5 and Nb_2O_5 Thin Films

摘要

Novel Ta and Nb compounds Ta(N~tBu)(O~tBu)_3 (1) and Nb(N~tBu)(O~tBu)_3 (2) were prepared as volatile liquid precursors for the MOCVD process. Ta_2O_5 and Nb_2O_5 films were obtained by using 1 and 2 in a lower temperature regime than pentaethoxy tantalum (PET) and pentaethoxy niobium (PEN). The deposition rates of 1 and 2 were higher more than 10 times than PET and PEN. Both precursors 1 and 2 gave conformal metal-oxide films, which exhibit excellent step coverage of over 90% on SiO_2 holes with an aspect ratio of ca. 6.