Electronic structure of InAs/GaSb superlattice for the modelling of MWIR pin photodiode

摘要

An 18-band k.p formalism has been developed to determine the band structure and wavefunctions of InAs/GaSb type II superlattices (T2SL). Bandgap results are in good agreement with measurements for symetrical superlattices. Thus, we are able to calculate intrinsic properties of InAs/GaSb SL as the effective mass, the density of state and the free carrier concentration. Then we compare the modelled and measured electro-optical properties of three different SL structures with a different InAs to GaSb thickness ratio R per SL period, but having the same cut-off wavelength of 5 pm at 77 K. (C) 2014 Elsevier B.V. All rights reserved.