Amorphous Si_xC_yN layers prepared from electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD).

摘要

ECR-PECVD processes with several activators and diluent gases were performed to obtain films with carbon and nitrogen at low temperatures. In all cases methane and nitrogen were used as precursors of C and N species. The characterization of the samples was done using Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry. The FTIR measurements that the presence of little amounts of silane in the plasma substantially alters the composition of the films, while the addition of hydrogen has no appreciable effects in their formation. Moreover, the use of argon or neon as diluent of the gas p-cursors is closely related to the degree of activation of the methane molecule, as observed in the optical emission spectra recorded in every process. The application of rf fields during depositions only changes the growth rates.