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High-surface-area ceria prepared by ALD on Al2O3 support

机译:ALD在Al2O3载体上制备的高表面积二氧化铈

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Al2O3 powders were modified by Atomic Layer Deposition (ALD) of CeO2 to produce composite catalyst supports for Pd. The weight of the support was found to increase linearly with the number of ALD cycles. This, together with TEM images, indicated that the CeO2 grows as a dense, conformal film, with a growth rate of 0.02 nm per cycle. The films showed good thermal stability under oxidizing conditions. XRD measurements on a sample with 0.28 g CeO2/g Al2O3 showed no evidence for crystalline CeO2 until calcination above 1073 K. Water-gas-shift rates on 1-wt% Pd catalysts supported on the CeO2 ALD-modified Al2O3 were essentially identical to rates on conventional Pd-CeO2 catalysts and much higher than rates on a catalyst in which Pd was supported on Al2O3 with CeO2 added by infiltration. The WGS rates, together with results from FTIR and CO-O-2 pulse studies, suggest that all of the Pd is in contact with CeO2 on the ALD-prepared supports and that it should be possible to prepare high-surface-area, functional supports using ALD. Published by Elsevier B.V.
机译:通过CeO2的原子层沉积(ALD)改性Al2O3粉末,以生产Pd的复合催化剂载体。发现载体的重量随ALD循环次数线性增加。这与TEM图像一起表明CeO2以致密的保形膜生长,每个周期的生长速率为0.02 nm。该膜在氧化条件下显示出良好的热稳定性。在含有0.28 g CeO2 / g Al2O3的样品上进行XRD测量,直到煅烧温度高于1073 K时,才显示出结晶CeO2的证据。在CeO2 ALD改性的Al2O3上负载的1-wt%Pd催化剂上的水煤气变换速率与速率基本相同。在常规的Pd-CeO2催化剂上的催化活性比在Pd-CeO2催化剂上的催化活性高得多,而Pd负载在Al2O3上并通过渗透添加CeO2的催化剂上的催化速率要高得多。 WGS速率以及FTIR和CO-O-2脉冲研究的结果表明,所有Pd均与ALD制备的载体上的CeO2接触,应该可以制备高表面积,功能性的支持使用ALD。由Elsevier B.V.发布

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