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High-surface-area ceria prepared by ALD on Al2O3 support

机译:ALD在AL2O3载体上制备的高表面积二氧化铈

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Al2O3 powders were modified by Atomic Layer Deposition (ALD) of CeO2 to produce composite catalyst supports for Pd. The weight of the support was found to increase linearly with the number of ALD cycles. This, together with TEM images, indicated that the CeO2 grows as a dense, conformal film, with a growth rate of 0.02 nm per cycle. The films showed good thermal stability under oxidizing conditions. XRD measurements on a sample with 0.28 g CeO2/g Al2O3 showed no evidence for crystalline CeO2 until calcination above 1073 K. Water-gas-shift rates on 1-wt% Pd catalysts supported on the CeO2 ALD-modified Al2O3 were essentially identical to rates on conventional Pd-CeO2 catalysts and much higher than rates on a catalyst in which Pd was supported on Al2O3 with CeO2 added by infiltration. The WGS rates, together with results from FTIR and CO-O-2 pulse studies, suggest that all of the Pd is in contact with CeO2 on the ALD-prepared supports and that it should be possible to prepare high-surface-area, functional supports using ALD. Published by Elsevier B.V.
机译:通过CeO 2的原子层沉积(ALD)改性Al 2O3粉末,得到Pd的复合催化剂载体。发现载体的重量与ALD循环的数量线性增加。这与TEM图像一起表明,CEO2以致密的共形薄膜生长,生长速率为0.02nm。在氧化条件下,薄膜显示出良好的热稳定性。具有0.28g CeO 2 / g Al2O3的样品上的XRD测量没有表现出结晶CeO2的证据,直至1073k的煅烧。在CeO 2 Ald改性的Al2O3上负载的1-Wt%Pd催化剂上的水 - 液移率基本上与速率相同在常规PD-CeO 2催化剂上,高于催化剂的速率,其中Pd在Al 2 O 3上负载Pd,通过渗透加入CeO 2。 WGS率与FTIR和CO-O-2脉冲研究的结果一起表明所有PD与ALD制备的支撑件上的所有PD接触,并且应该可以制备高表面积功能支持使用ALD。 elsevier b.v出版。

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