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机译:通过压电性调谐ALN / GaN异质结构中的二维电子气体的电气和热导体
Amer Univ Beirut Dept Phys POB 11-0236 Beirut 11072020 Lebanon;
Amer Univ Beirut Dept Phys POB 11-0236 Beirut 11072020 Lebanon;
Amer Univ Beirut Dept Phys POB 11-0236 Beirut 11072020 Lebanon;
Lebanese Univ Fac Sci 2 Platform Res Nanosci &
Nanotechnol Fanar Campus POB 90239 Jdeidet Lebanon;
Univ Cote Azur CNRS CRHEA F-06560 Valbonne France;
Amer Univ Beirut Dept Phys POB 11-0236 Beirut 11072020 Lebanon;
Univ Technol Troyes Light Nanomat &
Nanotechnol CNRS ERL 7004 F-10004 Troyes France;
Amer Univ Beirut Dept Phys POB 11-0236 Beirut 11072020 Lebanon;
two-dimensonal electron gas; AlN; GaN quantum well; tuning transport properties;
机译:二维电子气的AlN / GaN / AlGaN和AlN / GaN / InAlN异质结构的参数对其电性能和晶体管特性的影响
机译:高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较
机译:铟含量低(0.064≤x≤0.140)势垒的In_xAl_(1-x)N / AlN / GaN / AlN异质结构中二维电子气的双子带占据
机译:在AlGaN / AlN / GaN异质结构中的二维电子气体迁移率分布的热扩大
机译:通过杂质掺杂调节热电氧化物的电导率和热导率
机译:X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
机译:高质量AlGaN / AlN / GaN和AlInN / AlN / GaN二维电子气异质结构的传输性能比较
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。