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机译:平面型IngaAs / InP光电探测器的Zn扩散INP层的光学性质
Key Laboratory for New Type of Functional Materials in Hebei Province School of Material and Engineering Hebei University of Technology Tianjin 300130 China;
Key Laboratory for New Type of Functional Materials in Hebei Province School of Material and Engineering Hebei University of Technology Tianjin 300130 China;
Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China;
Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China;
Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China;
Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China;
Suna optoelectronics Suzhou 215123 China;
Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China;
Zn diffusion; semi-closed; InGaAs/InP PIN photodetectors; photoluminescence (PL); dark current; responsivity;
机译:平面型IngaAs / InP光电探测器的Zn扩散INP层的光学性质
机译:具有扩展的短波长响应的高密度平面扩散Zn的InGaAs / InP光电探测器阵列
机译:超快半绝缘InP:Fe-InGaAs:Fe-InP:Fe MSM光电探测器:建模和性能
机译:高密度,平面Zn扩散IngaAs / InP光电探测器阵列扩展短波长响应
机译:InGaAs / InP PIN光电探测器的材料表征
机译:通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
机译:分子束外延生长InGaAs / InP中的Zn扩散背照式p-i-n光电二极管
机译:用于毫米波光纤链路的高速InGaas / Inp肖特基势垒光电探测器的研制