Experimental Study of InP-Based InAlAs/InGaAs Quantum Well Infrared Photodetectors Operating at the 3-5μm Wavelength Region

摘要

Gas source molecular beam epitaxy grown InP-based InAlAs/InGaAs quantum well infrared photodetectors operating at 3—5 pm atmosphere window have been fabricated;their structural,electrical and optical characteristics have been investigated.The detectors show peak response wavelength Ap at 3.85μm,with spectral width AX/Xp of 4.6%and 7.2%at 1 and 5 V bias voltages,respectively.Very low dark current of the detectors has been observed.At 2 V bias the dark current is below InA at 77K and remains low value of 10 nA at 150 K.The background limited infrared performance temperature Tblip as high as 165 K has been measured.