Zn-diffused back-illuminated p-i-n photodiodes in InGaAs/InP grown by molecular beam epitaxy

摘要

[[abstract]]Epitaxial films of In0.53Ga0.47As lattice‐matched to InP substrates have been grown by molecular beam epitaxy (MBE). The carrier concentrations were as low as 3×1015 cm−3. High‐speed back‐illuminated PIN photodiodes for use at 0.95–1.6 μm wavelength were made from the resulting layers.