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机译:铁电偏振电荷的非易失性控制In2-XCRXO3半导体膜的电子性质
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Nanchang Univ Sch Mat Sci &
Engn Nanchang 330031 Jiangxi Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Ningbo Univ Fac Elect Engn &
Comp Sci Ningbo 315211 Zhejiang Peoples R China;
Univ Sci &
Technol China Hefei Natl Lab Phys Sci Microscale Dept Phys Hefei 230026 Anhui Peoples R China;
Univ Sci &
Technol China Hefei Natl Lab Phys Sci Microscale Dept Phys Hefei 230026 Anhui Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Hong Kong Polytech Univ Dept Appl Phys Kowloon Hong Kong Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
ferroelectric field effect; ferroelectric single crystal; electronic properties; wide-band-gap oxide semiconductors films; magnetoresistance;
机译:铁电偏振电荷的非易失性控制In2-XCRXO3半导体膜的电子性质
机译:氧化物半导体薄膜与基于弛豫的铁电单晶的整合,具有电性能的大可逆和非易失性调制
机译:在PB生长的Bi2te3拓扑绝缘体薄膜的电子性质非易失性和可逆的铁电控制(Mg1 / 3NB2 / 3)O-3-PBTIO3单晶
机译:包含极化反转响应的SrBi / sub 2 / TaO / sub 9 /薄膜电容器模型,用于铁电非易失性存储器的纳秒范围电路仿真
机译:铁电/电极接口:非易失性存储器中PZT电容器的极化切换和可靠性
机译:半导体:基于并五苯/ P13 /并五苯作为电荷传输层和陷阱层的有机半导体异质结构的高性能非易失性有机场效应晶体管存储器(Adv。Sci。8/2017)
机译:铁电偏振电荷的非易失性控制In2XCRXO3半导体膜的电子特性