SrBi/sub 2/TaO/sub 9/ thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory

摘要

An SrBi/sub 2/Ta/sub 2/O/sub 9/ thin film capacitor model including polarization reversal response based on P-t curves is proposed for the nanosecond range circuit simulations of ferroelectric nonvolatile memories (NVFRAMs). The circuit simulation for the READ/WRITE operation of the NVFRAM is realized by the capacitor model and it's unique parameter extraction method. This approach provides a significant means for predicting the READ/WRITE operations of the NVFRAMs in the range from 10 ns to 1 /spl mu/s.