The ferroelectric capacitor which stores information according to a polarization state due to the direction of voltage and the voltage which control manner of rewrite operating the memory cell in the semiconductor integrated circuit, possess the electronic

摘要

A semiconductor integrated circuit is provided wherein, when a sense amplifier 3 detects H data, the potential on a plate line PL switches from the power supply potential VDD to the GND potential. In other words, the timing at which the potential on the plate line is shifted from the power supply potential VDD to the GND potential is set immediately after the sense amplifier reads data. As a result, the start timing for a re-writing operation can be quickened.