...
机译:氧化物半导体薄膜与基于弛豫的铁电单晶的整合,具有电性能的大可逆和非易失性调制
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Nanchang Univ Sch Mat Sci &
Engn Nanchang 330031 Jiangxi Peoples R China;
Univ Sci &
Technol China Hefei Natl Lab Phys Sci Microscale Dept Phys Hefei 230026 Anhui Peoples R China;
Univ Notre Dame Dept Phys Notre Dame IN 46556 USA;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Beijing Normal Univ Dept Phys Beijing 100875 Peoples R China;
Nanchang Univ Sch Mat Sci &
Engn Nanchang 330031 Jiangxi Peoples R China;
Univ Sci &
Technol China Hefei Natl Lab Phys Sci Microscale Dept Phys Hefei 230026 Anhui Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
Chinese Acad Sci Shanghai Inst Ceram State Key Lab High Performance Ceram &
Superfine Shanghai 200050 Peoples R China;
ferroelectric field effect device; ferroelectric single crystal; electronic properties; tin dioxide thin film; magnetoresistance;
机译:氧化物半导体薄膜与基于弛豫的铁电单晶的整合,具有电性能的大可逆和非易失性调制
机译:在PB生长的Bi2te3拓扑绝缘体薄膜的电子性质非易失性和可逆的铁电控制(Mg1 / 3NB2 / 3)O-3-PBTIO3单晶
机译:用于低功耗的非易失性铁电存储器和氧化物半导体薄膜晶体管组成的显示驱动电路的读出调制方案
机译:基于松弛运动员的铁电单晶的生长和性能,通过溶液Bridgman和改进的Bridgman技术进行了高居里温度
机译:铁电氧化物薄膜光子晶体的光学性质研究。
机译:弛豫基铁电体0.24Pb(In1 / 2Nb1 / 2)O3-(0.76-x)Pb(Mg1 / 3Nb2 / 3)O3-xPbTiO3单晶的线性光电特性
机译:氧化物半导体薄膜与基于松弛的铁电单晶的整合,具有大的可逆和非易失性的电子性能调制
机译:1.创新的基于弛豫的压电晶体:相图,晶体生长,畴结构和电性质。基于准同型相界合成,表征和结构 - 性质关系的压电和铁电材料