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首页> 外文期刊>CERAMICS INTERNATIONAL >N substitution O-site in K0.5Na0.5Nb0.7Ta0.3O3 piezoceramics: Preparation, characterization and piezoelectric properties
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N substitution O-site in K0.5Na0.5Nb0.7Ta0.3O3 piezoceramics: Preparation, characterization and piezoelectric properties

机译:N.5NA0.5NB0.7TA0.3O3压电陶瓷中的N替换O-位点:制备,表征和压电性能

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In the study, the N-doped K0.5Na0.5Nb0.7Ta0.3O3-xNx (x = 0.035, 0.055, 0.073) lead-free piezoceramics were successfully synthetized by the reaction of KNNT powders with urea. We systematically researched the influences of N3- partially substituted O2- on ceramics phase structure, microstructure, domain structures, piezoelectric properties, and oxygen vacancy defects. The results indicated N3- partially substituted O2- in KNNT ceramics without changing its phase structure, and remained a pure phase perovskite structure. N-doped KNNT ceramics had caused lattice expanded along the c-axis, leading to the increase of the asymmetry of KNNT lattice. In addition, with the increase of N content in KNNT ceramics, T-C and TO-T of ceramics gradually decrease. Besides, the doped substitution of N to the O-site in KNNT ceramics would make the ceramics domains more easily reversed. The increase of lattice asymmetry and the easier reversal of electric domains caused by N doping would have positive effects on the d(33) of KNNTN ceramics. Nevertheless, as the amount of N in the KNNT ceramics increased, the forbidden band width of the ceramics became smaller and the defects increased; and the oxygen vacancy defect concentrations were 18.9%, 20.2%, 20.9% and 22.5%, which corresponded to KNNTN (x = 0), KNNTN (x = 0.035), KNNTN (x = 0.055) and KNNTN (x = 0.073), respectively. The increase of the oxygen vacancy defect concentrations of KNNT ceramics would have negative effects on its piezoelectric properties. Hence, there was a competitive relationship between the positive and negative effects of N3- doping substituting the O-site in KNNT ceramics. When the doping amount of N was x = 0.035, its positive effects was greater than negative effects, and its relative density also reached the maximum value of 91.12%, making its d(33) reached the maximum value of 207 pC/N.
机译:在该研究中,通过KNNT粉末与尿素的反应成功合成了N-掺杂的K0.5NA0.5NB0.7TA0.3O3-XNX(X = 0.035,0.055,0.073)无铅压电陶瓷。我们系统地研究了N3-部分取代的O 2对陶瓷相结构,微观结构,畴结构,压电性能和氧空位缺陷的影响。结果表明N3-部分取代的O 2 - 在KNNT陶瓷中而不改变其相结构,并保持纯相钙钛矿结构。 N掺杂的knnt陶瓷导致沿C轴膨胀的晶格,导致朗格晶格不对称的增加。另外,随着KNNT陶瓷中的N含量的增加,T-C和陶瓷的T-T逐渐减小。此外,N knt陶瓷中N到O型位点的掺杂替代物将使陶瓷域更容易逆转。晶格不对称的增加和N掺杂引起的电域的更容易反转将对KnnTN陶瓷的D(33)产生积极影响。然而,随着KNNT陶瓷中的N的量增加,陶瓷的禁用带宽变小,缺陷增加;并且氧气空位缺陷浓度为18.9%,20.2%,20.9%和22.5%,其对应于knntn(x = 0),knntn(x = 0.035),knntn(x = 0.055)和knntn(x = 0.073),分别。克尼特陶瓷的氧空位缺陷浓度的增加将对其压电性能产生负面影响。因此,N3-掺杂在knnt陶瓷中O型位点的正负效应之间存在竞争关系。当N的掺杂量为x = 0.035时,其正效效应大于负效应,其相对密度也达到最大值为91.12%,其D(33)达到207pc / n的最大值。

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