Design of sub-1-V CMOS bandgap reference circuit using only one BJT

摘要

This paper describes new CMOS bandgap reference (BGR) circuits capable of providing sub-1-V voltage reference while using only one BJT. The circuits use the concept of reverse bandgap voltage principle (RBVP) to generate attenuated versions of the silicon bandgap voltage of 1.205 V. Also, as opposed to the previously known sub-1-V BGR by Banba et al. (IEEE J Solid State Circuits 34:670-674, 1999), the circuits can be operated with lower supply voltage down to a 1.3 V supply. Based on the scheme, a 550 mV BGR is implemented in 65 nm CMOS process, with peak-to-peak variation of 7.19 mV across devices corners, temperature range of -20 to 80° and supply range of 1.6-2.0 V.