Epitaxial growth of SiGeC alloyed crystals using UHV-CVD

摘要

SiGeC alloyed crystals were grown by using UHV-CVD method. The substitutional C content in the SiGeC crystals was saturated at a certain value, and the maximum substitutional C content decreased with increasing the Ge content. The thermal stability was improved by an addition of C atoms into SiGe due to reduction of lattice strain, remaining the narrow bandgap.