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Temperature dependent photoluminescence processes in ZnO thin films grown on sapphire by pulsed laser deposition

机译:通过脉冲激光沉积在蓝宝石上生长的ZnO薄膜中与温度有关的光致发光过程

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摘要

Temperature dependence of the photoluminescence (PL) transitions in the range of 10-300 K was studied for ZnO thin films grown on sapphire by pulsed laser deposition. The low temperature PL spectra were dominated by recombination of donor bound excitons (B-X) and their phonon replicas. With increasing temperature, free exciton (F-X) PL and the associated LO phonon replicas increased in intensiy at the expense of their bound counterparts. The B-X peak with line width of similar to 6 meV at 10 K exhibited thermal activation energy of similar to 17 meV. consistent with the exciton-defect binding energy. The separation between the F-X and B-X peak positions was found to reduce with increasing temperature, which was attributed to the transformation of B-X into the shallower donor bound exciton complexes at consecutive lower energy states with increasing temperature, which are possible in ZnO. The energy separation between FX peak and its corresponding 1-LO phonon replica showed stronger dependence on temperature than that of 2-LO phonon replica. However, their bound counterparts did not exhibit this behavior. The observed temperature dependence of the energy separation between the free exciton and it is LO phonon replicas are explained by considering the kinetic energy of free exciton. The observed PL transitions and their temperature dependence are consistent with observations made with bulk ZnO crystals implying high crystalline and optical quality of the grown films.
机译:对于通过脉冲激光沉积在蓝宝石上生长的ZnO薄膜,研究了10-300 K范围内光致发光(PL)跃迁的温度依赖性。低温PL光谱以供体结合的激子(B-X)及其声子复制体的重组为主导。随着温度的升高,自由激子(F-X)PL和相关的LO声子复制品强度增加,但其结合的对应物却受到了损害。线宽在10 K时接近6 meV的B-X峰表现出的热活化能类似于17 meV。与激子-缺陷结合能一致。发现F-X和B-X峰位置之间的分离随着温度升高而降低,这归因于B-X在连续的较低能态下随温度升高而转变为较浅的供体结合的激子复合物,这在ZnO中是可能的。 FX峰与其对应的1-LO声子副本之间的能量分离显示出比2-LO声子副本对温度的依赖性更大。但是,其绑定的对等方没有表现出这种行为。通过考虑自由激子的动能来解释自由激子与LO声子复制体之间的能量分离所观察到的温度依赖性。观察到的PL跃迁及其对温度的依赖性与对大块ZnO晶体的观察一致,这暗示了所生长薄膜的高晶体和光学质量。

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