Sol-Gel Solution-Deposited InGaZnO Thin Film Transistors

摘要

Thin film transistors (TFTs) fabricated by solution processing of sol—gel oxide semiconductor precursors in the group In—Ga—Zn are described. The TFT mobility varies over a wide range depending on the precursor materials, the composition, and the processing variables, with the highest mobility being about 30 cmV(V s) for IZO and 20 cm~2/(V s) for IGZO. The positive dark bias stress effect decreases markedly as the mobility increases and the high mobility devices are quite stable. The negative bias illumination stress effect is also weaker in the higher mobility TFTs, and some different characteristic properties are observed, The TFT mobility, threshold voltage, and bias stress properties are discussed in terms of the formation of self-compensated donor and acceptor States, based on the chemistry and thermodynamics of the sol—gel process.