ORGANIC-INORGANIC HYBRID SOL-GEL SOLUTION, THE DIELECTRIC FILM MANUFACTURED USING THE SOLUTION, AND THE ORGANIC THIN-FILM TRANSISTOR COMPRISING THE DIELECTRIC FILM

摘要

Organic-inorganic hybrid sol-gel solution, the dielectric film manufactured by using the same solution, and an organic thin-film transistor comprising the same dielectric film are provided to reduce the production costs of transistor by using sol-gel solution process, and form the film on a flexible plastic substrate by low temperature heat treatment of the dielectric film. The organic-inorganic hybrid sol-gel solution is prepared from precursors having organic functional groups whose center element is silicon by using sol-gel process, wherein the precursor is selected from methyltrimethoxysilane, methyltriethoxysilane, tetraethylorthosilicate, phenyltriethoxysilane, phenyltrimethoxysilane and diphenyldiethylhexyloxydiethoxysilane; and hydrochloric acid is used in the sol-gel process as a catalyst in hydrolysis and condensation reaction. The organic-inorganic hybrid dielectric film is manufactured from the solution process by using organic-inorganic hybrid silica sol-gel solution, wherein the solution process is spin coating or deep coating process; and the manufactured film is treated with heat at 200 deg. C or less. The organic thin-film transistor contains gate insulating film formed by the organic-inorganic hybrid silica dielectric film.