Electrical Properties of MoS2 Field-Effect Transistors in Contact with Layered CrPS4

摘要

We report the enhanced electrical performance of a MoS2 field-effect transistor (FET) by using a contact with a layered CrPS4. Our transport measurements revealed that MoS2 channel with CrPS4 junction showed higher mobility of 33.9 cm(2)/Vs than that without CrPS4 junction on SiO2/Si substrate. We also fabricated a MoS2 FET with a top gate insulator, CrPS4, which showed low leakage current of 10(-11) A and high on/off ratio of 10(5). In a dual-gated FET with SiO2 bottom gate insulator and CrPS4 top gate insulator, much decreased sub-threshold swing of 0.70 V/dec was obtained.