UTILIZING MONOLAYER MOLECULAR CRYSTALS TO IMPROVE CONTACT PROPERTIES OF ORGANIC FIELD-EFFECT TRANSISTORS

摘要

A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C 10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60 ℃ and about 65℃ and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C 10-DNTT crystals formed according to the method is also provided.