首页> 外国专利> METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING SMALL MOLECULE AND POLYMER ORGANIC SEMICONDUCTOR BLENDS AND AN ORGANIC THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, CAPABLE OF IMPROVING PERFORMANCE BY MAXIMIZING THE SIZE OF A SMALL MOLECULAR ORGANIC CRYSTAL

METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING SMALL MOLECULE AND POLYMER ORGANIC SEMICONDUCTOR BLENDS AND AN ORGANIC THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, CAPABLE OF IMPROVING PERFORMANCE BY MAXIMIZING THE SIZE OF A SMALL MOLECULAR ORGANIC CRYSTAL

机译:使用小分子和高分子有机半导体混合物制造薄膜晶体管的方法以及由其制造的有机薄膜晶体管,通过最大程度地提高小分子有机晶体的尺寸可以提高性能

摘要

PURPOSE: A method for manufacturing a thin film transistor using small molecule and polymer organic semiconductor blends and an organic thin film transistor manufactured by the same are provided to minimize obstacles to form a large crystal of a small molecule on an organic semiconductor mixing film by coating the substrate with the small molecule and polymer organic semiconductor blends and reducing the temperature of a thermal process.;CONSTITUTION: A substrate is prepared. Source and drain electrodes are formed on the substrate. A small molecule and polymer organic semiconductor blend layer is formed on the source and drain electrodes. The substrate with a semiconductor layer is thermally processed. An organic insulation film layer is formed on the substrate which is thermally processed. A gate electrode is formed on the substrate with the organic insulation film layer.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Substrate provision; (BB) Source/drain electrode forming; (CC) Organic semiconductor blend layer forming; (DD) Organic semiconductor blend layer thermal processing; (EE) 40~60°C 30 min; (FF) Organic insulation film layer forming; (GG) Gate electrode forming
机译:目的:提供一种使用小分子和聚合物有机半导体共混物制造薄膜晶体管的方法以及由其制造的有机薄膜晶体管,以最小化通过涂覆在有机半导体混合膜上形成小分子大晶体的障碍。具有小分子和聚合物有机半导体共混物的基材,并降低了热处理的温度。;组成:准备了基材。源电极和漏电极形成在基板上。在源电极和漏电极上形成小分子和聚合物有机半导体共混物层。具有半导体层的基板被热处理。在被热处理的基板上形成有机绝缘膜层。栅电极形成在具有有机绝缘膜层的衬底上。COPYRIGHTKIPO 2013; [参考数字](AA)衬底规定; (BB)源/漏电极的形成; (CC)有机半导体共混物层的形成; (DD)有机半导体共混层热处理; (EE)40〜60°C 30分钟; (FF)有机绝缘膜层的形成; (GG)栅电极成型

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