3 , Ar 4 , Ar 5 , Ar 6 , Ar 7 and Ar 8 R in the compound 2 ~R 19 are each independently hydrogen, C 1 -C 25 alkyl group, a C 1 -C 25 alkoxy group, or an alkyl group having 1 to 25 and / or the alkoxy group may be selected from the group consisting of a substituted aryl group having 6 to 30, Ar 9 , Ar 10 , Ar 11 , and Ar 12 are each independently an aryl group having 6 to 30 carbon atoms, having a carbon number of 0 to 30 compounds of the following heterocyclic aromatization, having 6 to 30 carbon atoms or less fluorinated aryl group, an alkyl group having 1 to 25 and / or an alkoxy group is substituted a C 6 aryl group and may be selected from the group consisting of aryl fluoride to 30, R 1 oxide is a polyethylene oxide group having 1 to 25, 1 to 25 carbon atoms of the polyalkylene oxide group, an alkyl group having 1 to 25 carbon atoms C25 fluorinated alkyl group, an alkoxy group having 1 to 25 of D, is selected from C 1 -C 25 group consisting of polydimethylsiloxane group, n is an integer of not more than 100,000 . ; Since the organic semiconductor compound according to the invention can easily form a thin film by a solution process because of the high solubility and to reduce the manufacturing costs of manufacturing the organic thin film transistor, due to the superior liquid crystal molecular arrangement This is easily and have the superior crystalline, organic thin film transistor to be produced by applying such compounds that can facilitate the transfer of electric charge within the molecule or between molecules by the introduction of various substituents and the substituent group is, of course, excellent crystal Castle and strong pie - due to the stacking of the hole and electron mobility has improved, as well as excellent off ratio"/>