Nickel Doping on Cobalt Oxide Thin Film Using by Sputtering Process-a Route for Surface Modification for p-type Metal Oxide Gas Sensors

摘要

This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at 350 degrees C for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at 250 degrees C) and CO (at 200 degrees C) gases in comparison with the undoped samples.