Establishment of Theoretical Model and Experiment of Abrasive Removal Depth with Consideration of the Chemical Reaction Effect of Slurry with Different Volume Concentrations and Exploration of the Effect on Chemical Mechanical Polishing of Silicon Wafer

摘要

The study combines the analytical model of the number of polishing times with the theory of specific downward force energy (SDFE) so as to establish a theoretical model of abrasive removal depth of silicon wafer with consideration of the chemical reaction effect of slurry with different volume concentrations for the use of cross-groove pattern polishing pad. Through experimental results of atomic force microscopy (AFM), we calculate the SDFE values of silicon Wafer affected by the chemical reaction of slurry with different volume concentrations, establish a theoretical equation of the thickness of chemical reaction layer affected by slurry with different volume concentrations, and calculate the thicknesses of chemical reaction layer of silicon wafer affected by slurry with different volume concentrations. After establishing the theoretical model of abrasive removal depth, the paper conducts simulation and experiment of average abrasive removal depths of silicon wafer affected by the chemical reaction of slurry with different volume concentrations.