Theoretical model and experimental analysis of chemical mechanical polishing with the effect of slurry for abrasive removal depth and surface morphology of silicon wafer

摘要

This study considers the effect of the chemical reaction of slurry for chemical mechanical polishing and combines an analytical model of polishing times and the theory of specific downward force energy to construct a theoretical model to calculate abrasive removal depth of a silicon wafer that is polished by a cross-groove pattern polishing pad. Specific down force energy is used to calculate the thickness of the chemical reaction layer of the silicon wafer. A comparison of the average abrasive removal depths and the surface morphology of silicon wafer that uses simulation and experiment shows that the simulation results for the average abrasive removal depths and the surface morphology of silicon wafer are acceptable.