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Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs

机译：焊盘表面粗糙对大直径硅晶片化学机械抛光中施加到GaN基LED衬底的影响

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1. Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs [J] . Michio Uneda, Yuki Maeda, Kazutaka Shibuya, Sensors and materials . 2014,第6期

机译：应用于GaN基LED衬底的大直径硅晶圆化学机械抛光中焊盘表面粗糙度对去除速率的影响
2. The Effect of Pad-asperity Curvature on Material Removal Rate in Chemical-mechanical Polishing [J] . Sanha Kim, Nannaji Saka, Jung-Hoon Chun Procedia CIRP . 2014,第5aPartaA期

机译：焊盘 - 粗糙曲率对化学机械抛光材料去除率的影响
3. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads [J] . Zone-Ching Lin, Wei-Shuen Huang, Ju-Shiau Tsai Journal of Mechanical Science and Technology . 2012,第8期

机译：不同抛光垫化学机械抛光中蓝宝石晶片材料去除量的研究
4. Effect of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing [C] . Michio Uneda, Yuki Maeda, Ken-ichi Ishikawa CHINA-JAPAN International Conference on Ultra-Precision Machining . 2012

机译：垫表面粗糙对化学机械抛光中去除率的影响
5. Tunable removal rates of silicon dioxide, silicon nitride and polysilicon films during chemical mechanical polishing. [D] . Dandu, Veera P. R. 2010

机译：化学机械抛光过程中可调节的二氧化硅，氮化硅和多晶硅膜的去除率。
6. Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping [O] . Yong Hu, Dong Shi, Ye Hu, 2018

机译：超声化学机械抛光与超声研磨相结合的单晶碳化硅晶片材料去除及表面生成研究
7. Effect of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing [O] . Michio Uneda, Yuki Maeda, Ken-ichi Ishikawa, 2016

机译：垫片表面粗糙度对化学机械抛光去除率的影响

Influence of Pad Surface Asperity on Removal Rate in Chemical Mechanical Polishing of Large-Diameter Silicon Wafer Applied to Substrate of GaN-Based LEDs

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