The characteristics of IGZO/ZnO/Cu2O:Na thin film solar cells fabricated by DC magnetron sputtering method

摘要

In this work, the optical and electrical properties of absorber layers based on cuprous oxide material were investigated. The CuO and Cu2O thin films have been fabricated by reactive DC magnetron sputtering method. All films are p-type semiconductors and have high absorbance in visible range. A solution to improve the electrical properties of the films was also mentioned by incorporating of Sodium (Na) impurities. The Na-doped Cu2O thin films exhibit the hole concentration in magnitude of 10(18) cm(-3) associated with low resistivity of 6.8 Omega cm which are suitable for photovoltaic applications. Copper vacancies produced when Na atoms were incorporated in the Cu2O lattice have caused the increase of hole concentration. The solar cell with structure of IGZO/ZnO/Cu2O:Na was fabricated and investigated for the first time. Remarkable results including open circuit-voltage, fill factor, and conversion efficiency were 0.68 V, 0.42, and 1.68%. (C) 2017 Elsevier B.V. All rights reserved.