首页> 外文期刊>Journal of Solid State Chemistry >A detailed study on the dielectric properties of CCTO@SiO2 core-shell nanoparticles: Role of SiO2-NH2 shell over CCTO core surface
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A detailed study on the dielectric properties of CCTO@SiO2 core-shell nanoparticles: Role of SiO2-NH2 shell over CCTO core surface

机译:CCTO / SiO2核壳纳米粒子介电性能的详细研究:SiO2-NH2壳对CCTO芯表面的作用

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In this work amine functionalized core-shell CCTO silica NPs (CCTO@SiO2-NH2) have been designed with dielectric gradients. CCTO@SiO2-NH2 core-shell NPs consist of CCTO as core (dia. 100-300 nm), and aminated silica as a shell of thickness from 5 nm-20 run. CCTO@SiO2-NH2 core/shell NPs were characterized with suitable characterization tools and the dielectric bahaviours were measured through impedance measurement. The dielectric study has shown significantly high dielectric properties at sintered temperature 1000 degrees C (6 h). Further, with the increase in the shell thickness of coated SiO2-NH2 on CCTO core, the dielectric constant e', as well as the dielectric loss epsilon '' values decreased at respective frequencies, ranges between 20 Hz and 2 MHz and vice versa. The study also suggests that at the lowest frequency of 20 Hz, CCTO@SiO2 NPs with a thickness of 5 nm shows a relatively high c' 1.390 x 10(3) whereas of 20 nm shell thickness shows a epsilon' value of 1.39 x 10(2). However, with a change in the thickness of SiO2 shell, the values of epsilon' and epsilon '' varied with a regular trend (2 Hz to 20 MHz). The thinner and thicker coated SiO2 on CCTO NPs exhibited epsilon '' of (2.7 x 10(2), 13) and (73, a negative value of -26) at 1 kHz and 2 MHz, respectively. Thus the values of epsilon' as a function of frequency for CCTO@SiO2-NH2 core/shell NPs at different temperature range between RT to 250 degrees C signifies the high epsilon' 1.2 x 10(4) for least coating and when coated sample undergoes heat treatment, it leads to the removal of some organic group before 150 degrees C which contributes to the increase of epsilon' due to the property showing by CCTO surface towards the externally applied field. Finally, it can conclude that this series of CCTO@SiO2-NH2 with a different dielectric constant can be used for designing various electronic devices.
机译:在这项工作中,胺官能化核心 - 壳CCTO二氧化硅NPS(CCTO @ SiO2-NH2)设计,具有介电梯度。 CCTO @ SiO2-NH2核心壳NPS由CCTO为核心(直径100-300nm),以及胺化二氧化硅,作为厚度的壳,从5 nm-20运行。 CCTO @ SiO2-NH2核/壳体NPS以合适的表征工具为特征,通过阻抗测量来测量介质Bahaviours。介电研究在烧结温度1000℃(6小时)下显着高介电性能。此外,随着涂覆的SiO2-NH2上的壳厚度的增加,在CCTO芯上的介电常数E'以及介电损耗epsilon'的值在各自的频率下降低,范围为20Hz和2 MHz,反之亦然。该研究还表明,在20Hz的最低频率下,厚度为5nm的CctO @ SiO2 NP显示相对高的C'1.390×10(3),而20nm壳厚度为1.39×10的epsilon值。 (2)。然而,随着SiO 2壳的厚度的变化,ε'和epsilon''的值与常规趋势(2 Hz至20MHz)变化。 CCTO NPS上的较薄和较厚的涂覆的SiO 2分别在1kHz和2MHz分别显示出(2.7×10(2),13)和(73,负值-26)的ePsilon''。因此,作为CCTO @ SiO2-NH2核/壳NPS的频率函数的epsilon'的值在rt 250℃之间的不同温度范围内的函数表示,至少涂覆的高ε1.2x 10(4),并且当涂覆的样品经历时热处理,它导致在150℃之前除去一些有机组,这有助于ε'增加,由于CCTO表面朝向外部施加的场。最后,可以得出结论,具有不同介电常数的CCTO @ SiO2-NH2的该系列可用于设计各种电子设备。

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