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Analytical Force Modeling of Fixed Abrasive Diamond Wire Saw Machining With Application to SiC Monocrystal Wafer Processing

机译:固定磨石金刚石锯加工应用于SiC单晶晶晶片加工的分析力建模

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Free abrasive diamond wire saw machining is often used to cut hard and brittle materials, especially for wafers in the semiconductor and optoelectronics industries. Wire saws, both free and fixed abrasive, have excellent flexibility, as compared to inner circular saws, outer saws, and ribbon saws, as they produce a narrower kerf, lower cutting forces, and less material waste. However, fixed abrasive wire saw machining is being considered more and more due to its potential for increased productivity and the fact that it is more environmentally friendly as it does not use special coolants that must be carefully disposed. The cutting forces generated during the wire saw process strongly affect the quality of the produced parts. However, the relationship between these forces and the process parameters has only been explored qualitatively. Based on analyzing the forces generated from the chip formation and friction of a single abrasive, this study derives an analytical cutting force model for the wire saw machining process. The analytical model explains qualitative observations seen in the literature describing the relationship between the cutting forces and the wafer feed rate, wire velocity, and contact length between the wire and wafer. Extensive experimental work is conducted to validate the analytical force model. Silicon carbide (SiC) monocrystal, which is employed extensively in the fields of microelectronics and optoelectronics and is known to be particularly challenging to process due to its extremely high hardness and brittleness, is used as the material in these experimental studies. The results show that the analytical force model can predict the cutting forces when wire saw machining SiC monocrystal wafers with average errors between the experimental and predicted normal and tangential forces of 9.98% and 12.1%, respectively.
机译:自由磨料金刚石线锯加工通常用于切割硬质和脆性材料,特别是用于半导体和光电子工业的晶片。与内圆锯,外锯和带状锯相比,自由和固定磨料的电线锯具有优异的灵活性,因为它们产生较窄的Kerf,较低的切割力和更少的材料废物。然而,由于其增加生产率的可能性以及更环保的事实,因为它不使用必须仔细地设置的特殊冷却剂,因此越来越多地被认为是越来越多的。在线锯工艺期间产生的切割力强烈影响所产生的部件的质量。然而,这些力与过程参数之间的关系才有于定性探讨。基于分析从单个磨料的芯片形成和摩擦产生的力,该研究产生了线锯加工过程的分析切割力模型。分析模型解释了描述了描述切割力与晶片进料速率,线速度和线材之间的接触长度之间的关系的定性观察。进行广泛的实验工作以验证分析力模型。碳化硅(SiC)单晶,其在微电子和光电子领域中广泛使用,并且已知由于其极高的硬度和脆性而特别具有挑战性,用作这些实验研究中的材料。结果表明,当电线锯加工SiC单晶晶晶片时,分析力模型可以预测切割力,实验和预测正常和切向力分别为9.98%和12.1%的平均误差。

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