In this paper, theoretical analysis and experiment verification were combined to analyze the sawing force of SiC wafer cut with electroplated diamond wire saw under workpiece rotating condition. Based on the grinding and dynamic cutting theory, the motion model of wire saw and workpiece, the radial and tangential force of a single diamond grain were analyzed, and then the SiC wafer sawing force model was built. The SiC wafer sawing experiments with workpiece rotating were carried out to verify the theoretical analysis, the influence of wire saw velocity, workpiece feeding, workpiece rotating and the uncut part of the workpiece on the tangential force were emphatically analyzed. The results show that the relative error between the theoretical analysis and experimental result is no more than 5.2% , thus the correctness of the established model is verified, which will provide basis for exploring the SiC wafer cutting mechanism and parameter optimizing.%通过理论分析和实验研究相结合的方法,对工件旋转条件下电镀金刚石线锯切割SiC单晶片锯切力进行了分析.依据磨削和动态切削理论,分析了线锯与工件运动模型、单颗金刚石磨粒的切向和法向锯切力,建立了金刚石线锯锯切力模型；进行了工件旋转条件下SiC单晶切割实验,对理论分析结果进行验证,重点对线锯速率、工件进给速率、工件旋转速率及工件未切割直径等工艺因素对切向锯切力的影响进行分析.结果表明理论分析和实验结果相对误差不大于5.2％,验证了所建模型的正确性,为探索SiC单晶片的切削机理和参数优化提供依据.
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