Growth of Germanium Quantum Dots on Oxidized Silicon Surface

摘要

Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of the nucleation and growth of three-dimensional islands by the Volmer-Weber mechanism in this system is proposed. The dependences of the average size and surface density of quantum dots on the parameters of their synthesis are obtained. The proposed theoretical model can easily be extended to other material systems in which island growth by the Volmer-Weber mechanism is realized.