METHOD FOR GROWTH OF GERMANIUM QUANTUM DOTS, GERMANIUM QUANTUM DOT COMPOSITE MATERIAL AND APPLICATION THEREOF

摘要

The present invention relates to a method for growth of germanium quantum dots. In the method, germanium quantum dots are grown on graphene interfaces with different quantities of layers. In the present invention, ultra-high uniformity graphene interfaces are introduced on a conventional substrate surface, Ge quantum dots are grown on the interfaces, and complicated cleaning processes for obtaining high-quality interfaces are avoided, and process flows are simplified; in addition, the low-matrix element content and the low defect rate of the germanium quantum dots are ensured, a self-organization growth process of the germanium quantum dots is ensured, and germanium quantum dots with good shape and uniformity are formed.