Mechanisms of charge carriers nonequilibrium in transport processes in bipolar semiconductors

摘要

The interplay between physical origins of the nonequilibrium and their influence on the linear steady state transport processes in bipolar semiconductors are under investigation. Particular attention is paid to the influence of the energy nonequilibrium on the generation-recombination processes under various conditions. It is shown that in the case of the same (even if coordinate-dependant) temperature of the charge carriers and the phonons the volume recombination rate of the charge carriers in the steady state is completely determined by the splitting of the quasi-Fermi levels.