Semiconductor component e.g. bipolar transistor, has charge carrier compensation zone between drift zone and connection zone, where doping concentration of charge carrier compensation zone is greater than concentration of connection zone

摘要

The semiconductor component has a drift zone (12) weakly doped as a connection zone (11). A component transition is provided between the drift zone and a component zone (14), and a charge carrier compensation zone (13) is provided between the drift zone and the connection zone. Doping concentration of the charge carrier compensation zone is greater than doping concentration of the connection zone. The doping concentration of the connection zone increases towards the connection zone from a minimal doping concentration to a maximum doping concentration.