On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

摘要

The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In~(0.74)Ga~(0.26)As quantum wells and δ-doped In~(0.53)Al~(0.20)Ga~(0.27)As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p -type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 10_(12)cm_(–2)results in the suppression of nonradiative recombination.