Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating

摘要

In-situ B doping in epitaxial and amorphous Si films was investigated by low-energy electron-cyclotron resonance (ECR) Ar plasma chemical vapor deposition (CVD) by using SiH4 and B2H6 without substrate heating. For a B-doped epitaxial Si film, high carrier concentration of 7.1x10(19) cm(-3) with Hall mobility of 19 cm(2) V-1 s(-1) was measured at room temperature. Moreover, good rectifying characteristics was obtained for a Si p+/n junction diode. Especially for exploration of a heavily B-doped Si film, depth profiling results show that B concentration tends to be smaller near the initial substrate surface. Finally, effective control of B segregation by atomic-order B pre-deposition or by Si buffer deposition on initial Si(100) has been demonstrated to achieve heavy B doping in whole region of deposited Si film.