机译:A-SiOx:H钝化层,用于热线化学气相沉积沉积的CZ-Si晶片
Nanchang Univ Inst Photovolta Nanchang 330031 Jiangxi Peoples R China;
Nanchang Univ Inst Photovolta Nanchang 330031 Jiangxi Peoples R China;
Nanchang Univ Inst Photovolta Nanchang 330031 Jiangxi Peoples R China;
Nanchang Univ Inst Photovolta Nanchang 330031 Jiangxi Peoples R China;
Nanchang Univ Sch Sci Nanchang 330031 Jiangxi Peoples R China;
Nanchang Univ Inst Photovolta Nanchang 330031 Jiangxi Peoples R China;
Nanchang Univ Inst Photovolta Nanchang 330031 Jiangxi Peoples R China;
a-SiOx:H; HWCVD; Passivation; Effective lifetime; epsilon(2); FTIR; SiHx;
机译:A-SiOx:H钝化层,用于热线化学气相沉积沉积的CZ-Si晶片
机译:发射极沉积温度对热线化学气相沉积硅异质结太阳能电池表面钝化的影响
机译:在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性
机译:六甲基二硅氮烷热线化学气相沉积法沉积的a-SiCN:H钝化层的表征
机译:通过热线化学气相沉积在低温下在多晶硅籽晶层上外延生长硅。
机译:通过原子层沉积和化学气相沉积在高纵横比结构中沉积的薄膜的ToF-SIMS 3D分析
机译:催化化学气相沉积在C-Si晶圆上沉积的SINX / Si的SINX堆叠层钝化质量的影响