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METHODS AND APPARATUS FOR DEPOSITING CHALCOGENIDE LAYERS USING HOT WIRE CHEMICAL VAPOR DEPOSITION
METHODS AND APPARATUS FOR DEPOSITING CHALCOGENIDE LAYERS USING HOT WIRE CHEMICAL VAPOR DEPOSITION
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机译:用热丝化学气相沉积法沉积硫族化物层的方法和装置
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摘要
Methods and apparatus for depositing chalcogenide materials on substrates in a hot wire chemical vapor deposition (HWCVD) process are provided herein. In some embodiments, a method of depositing a chalcogenide film atop a substrate in a hot wire chemical vapor deposition (HWCVD) process chamber includes vaporizing one or more liquid chalcogenide precursors while flowing a carrier gas to form a first gas mixture of the vaporized chalcogenide precursor and the carrier gas; mixing the first gas mixture with a second gas to form a second gas mixture, wherein the second gas is a catalyst; and flowing the second gas mixture to the HWCVD process chamber, wherein the second gas mixture dissociates in the HWCVD process chamber to deposit a chalcogenide film atop the substrate.
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