Study on the Growth Kinetics of III-V Compound Semiconductor by Liquid Phase Epitaxy for Microelectronic Applications

摘要

The growth kinetics of Gallium Phosphide (GaP) and Gallium Antimonide (GaSb) crystal in Ga-rich solution has been discussed in this article. A one dimensional numerical method was employed to study the growth kinetics and the growth rate, concentration profiles, thickness of the grown layers etc of GaP and GaSb crystals were computed at different cooling rates by Liquid Phase Epitaxy (LPE). One-dimensional solute diffusion model equation was solved numerically by using the Laplacian centred difference approximation and the concentration profiles of solute atoms (i.e., Phosphorus and Antimony atoms) in the melt in front of growing crystal interface during the liquid phase epitaxial growth at different cooling rates were simulated. The data obtained from the simulation study was used to calculate the growth rate and the thickness of the grown layer of GaP and GaSb crystals for different growth parameter such as time and temperature. To compare with the reported experimental results, our model has been applied to calculate the average thickness of the grown solid as a function of time and a good agreement was found when our theoretical findings were compared with the reported values.