Effect of Annealing on the Characteristics of TiO_2 Thin Film Deposited by Low Temperature Arc Vapor Deposition Process

摘要

The TiO_2 thin films, deposited by Low Temperature Arc Vapor Deposition (LTAVD) process on n type Si<100> substrate, have been investigated for structural, morphological, electrical and optical properties. The effect of annealing on the properties of the films has also been studied. The deposited film was amorphous in nature and was subsequently found to be converted to anatase polycrystalline nature following annealing. The deposited TiO_2 thin film was n-type in nature and its resistivity was found to increase with the increase in temperature in O_2 atmosphere. The carrier concentration of the films was of the order of 10~(17) /cm~3. The direct bandgap was estimated to be 3.47 eV from the results of PL study. A good quality polycrystalline anatase TiO_2 film suitable for thin-film devices was successfully obtained by LTAVD process.