Nanocrystalline silicon carbide thin films prepared by plasma enhanced chemical vapor deposition

摘要

Nanocrystalline silicon carbide were prepared by PECVD technology in ca- pacitively parallel plate plasma reactor, where both silane and methane were introduced into the plasma reactor. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at.%. IR results showed the presence of Si-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. Results of I-V measurements before and after samples irradiation by neutrons are presented.