Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature

摘要

The effect of plasma power on the structural properties of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition was investigated. The film structure was strongly influenced by the plasma power due to the change in atomic hydrogen density in the vapor phase. A high plasma power of above 170W (2.17W/cm~2) is required for depositing nc-3C-SiC:H films.