首页>
外国专利>
LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS
LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS
展开▼
机译:硅氮薄膜的低温等离子体化学气相沉积
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate (40,125). The method includes providing a substrate (40, 125) in a process chamber (10, 110), exciting a reactant gas in a remote plasma source (94, 205), thereafter mixing the excited reactant gas with a silazane precursor gas, and depositing a silicon-nitrogen-containing film on the substrate (40, 125) from the excited gas mixture in a chemical vapor deposition process. In one embodiment of the invention, the reactant gas can contain a nitrogen-containing gas to deposit a SiCNH film. In another embodiment of the invention, the reactant gas can contain an oxygen-containing gas to deposit a SiCNOH film.
展开▼