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Morphology and properties of PZT nanoparticle modified PZT thick filmby alternative spinning

机译:PZT纳米粒子改性PZT厚薄膜下替代纺丝的形态与性质

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摘要

The present work focused on the study of morphology, crystalline structure and the ferroelectric properties of PZT thick film, which was modified with PZT nanoparticles and prepared by alternative spinning technique. The experimental results showed that the alternative spinning technique not only improved the film thickness, but also solved the problem on the membrane surface roughness of the thick film prepared by PZT 0-3 composite sol method. The results also confirmed that the electrical properties depended strongly on the annealing temperature and film thickness. With the increase of the annealing temperature, P-r increased and E-c changed inconspicuously. When the thickness of PZT thick film increased, E-c decreased but P-r increased. For the 4 mu m-thick film, E-c and P-r were 23 kV/cm and 60 mu C/cm(2), respectively. These results suggest that the modified PZT thick film has a potential application on the fabrication of micro-devices because it provides good ferroelectricity, dielectricity and piezoelectricity.
机译:本作研究的重点是研究PZT厚膜的形态,结晶结构和铁电性能,其用PZT纳米颗粒改性并通过替代纺丝技术制备。实验结果表明,替代纺纱技术不仅改善了薄膜厚度,还解决了PZT 0-3复合溶解方法制备的厚膜的膜表面粗糙度问题。结果还证实,电气特性依赖于退火温度和膜厚度。随着退火温度的增加,P-R增加,E-C不显眼变化。当PZT厚膜的厚度增加时,E-C降低但P-R增加。对于4μmμm厚的薄膜,E-C和P-R分别为23kV / cm和60μc/ cm(2)。这些结果表明,改性的PZT厚膜在微器件的制造上具有潜在的应用,因为它提供了良好的铁电,介电和压电。

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