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Preparing and Ferroelectrical properties of PZT nanoparticle modified PZT thick film by alternately spinning technique

机译:通过交替纺丝技术制备PZT纳米粒子改性PZT厚膜的制备和铁电性能

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The present work focused on the study of preparing processes and the ferroelectric properties of a crack-free and PZT nanoparticle modified PZT thick film by alternately spinning technique. With the increase of the annealing temperature, Pr increased and Ec changed inconspicuously. When the thickness of PZT thick film increased, Ec decreased but Pr increased. For the 4μm-thick film, Ec and Pr were 23 kV/cm and 60 μC/cm~2, respectively. The results also confirmed that the alternately spinning technique not only improved the film thickness, but also solved the membrane surface roughness problem of the thick film prepared by PZT 0-3 composite sol method.
机译:本作研究专注于通过交替纺丝技术研究制备无裂缝和PZT纳米颗粒改性的PZT厚膜的方法和铁电性能。随着退火温度的增加,PR增加,EC不显眼变化。当PZT厚膜的厚度增加时,EC减少但Pr增加。对于4μm厚的薄膜,EC和PR分别为23kV / cm和60μC/ cm〜2。结果还证实,交替纺纱技术不仅改善了膜厚度,还解决了通过PZT 0-3复合溶胶方法制备的厚膜的膜表面粗糙度问题。

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