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首页> 外文期刊>Analog Integrated Circuits and Signal Processing >Ex-situ training of large memristor crossbars for neural network applications
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Ex-situ training of large memristor crossbars for neural network applications

机译:用于神经网络应用的大型忆反谱的前训训练

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Memristor crossbar arrays carry out multiply-add operations in parallel in the analog domain, and can enable neuromorphic systems with high throughput at low energy and area consumption. Neural networks need to be trained prior to use. This work considers ex-situ training where the weights pre-trained by a software implementation are then programmed into the hardware. Existing ex-situ training approaches for memristor crossbars do not consider sneak path currents, and they may work only for neural networks implemented using small crossbars. Ex-situ training in large crossbars, without considering sneak paths, reduces the application recognition accuracy significantly due to the increased number of sneak current paths. This paper proposes ex-situ training approaches for both 0T1M and 1T1M crossbars that account for crossbar sneak paths and the stochasticity inherent in memristor switching. To carry out the simulation of these training approaches, a framework for fast and accurate simulation of large memristor crossbars was developed. The results in this work show that 0T1M crossbar based systems can be 17-83% smaller in area than 1T1M crossbar based systems.
机译:Memitristor CrossBar阵列在模拟域中进行乘法添加操作,并且可以在低能量和面积消耗下使具有高吞吐量的神经形态系统。在使用前需要培训神经网络。这项工作考虑了前地训练,然后通过软件实现预先训练的权重被编程到硬件中。 Memitristor Crossbars的现有前训训练方法不考虑潜行路径电流,并且它们仅适用于使用小型横梁实现的神经网络。由于潜水量增加,而不考虑潜行路径的情况下,在大型横杆的情况下进行大型横杆的训练,显着降低了应用识别准确性。本文提出了0T1M和1T1M交叉栏的前训培训方法,该横梁划分为横杆潜行路径和忆阻器切换中固有的随机性。为进行这些培训方法的模拟,开发了一种快速准确地模拟大型留片机横梁的框架。这项工作中的结果表明,基于1T1M的基于1T1M的基于横杆的系统,基于0T1M的基于横杆的系统可以是17-83%。

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