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Spike Detection in Memristor Crossbar Array Implementations of Spiking Neural Networks

机译:映射神经网络映射阵列实现的峰值检测

摘要

Systems, methods and apparatus of implementing spiking neural networks. For example, an integrated circuit includes a crossbar array of first memristors connected between wordlines and bitlines. The first memristors are configured to convert voltages applied on the wordlines into currents in the bitlines. Second memristors having thresholds are connected to the bitlines respectively. Each respective memristor in the second memristors can reduce its resistance to cause spiking in a current flowing through the respective memristor, when the current reaches the threshold of the respective memristor. Current level detectors are connected to the second memristors to determine whether the currents in the bitlines have levels corresponding to reaching thresholds of the second memristors and thus, generate output spikes of spiking neurons without using analog-to-digital converters to measure the currents in the bitlines.
机译:实施尖峰神经网络的系统,方法和装置。例如,集成电路包括连接在字线和位线之间的第一存储器的横杆阵列。第一存储器被配置为将施加在字线上的电压转换为位线中的电流。具有阈值的第二映像器分别连接到位线。当电流达到相应存储器的阈值时,第二存储器中的每个相应的忆阻器可以减小其在流过各个忆失的电流中的尖峰。电流水平检测器连接到第二忆出器,以确定比特素中的电流是否具有与达到第二忆出器的达到阈值的水平,因此,在不使用模数转换器的情况下生成尖刺神经元的输出尖峰,以测量电流比特素。

著录项

  • 公开/公告号US2021133541A1

    专利类型

  • 公开/公告日2021-05-06

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201916669902

  • 发明设计人 ANAKHA VASANTHAKUMARIBABU;POORNA KALE;

    申请日2019-10-31

  • 分类号G06N3/063;G06N3/04;G11C13;

  • 国家 US

  • 入库时间 2022-08-24 18:34:42

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