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Design Considerations for Training Memristor Crossbars Used in Spiking Neural Networks

机译:训练用于尖峰神经网络的忆阻器交叉开关的设计注意事项

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摘要

CMOS/Memristor integrated architectures have shown to be powerful for realizing energy-efficient learning machines. These architectures are recently demonstrated in reservoir computing networks, which have reduced training complexity and resource utilization. In reservoir computing, the training time is curtailed due to random weight initialization in the hidden layer, which will remain constant during training. The CMOS/memristor variability can be exploited to generate these random weights and reduce the area overhead. Recent studies have shown that the CMOS/memristor crossbars are ideal for on-device learning machines, including reservoir computing networks. An exemplary CMOS/memristor crossbar based on-device accelerator, Ziksa, was demonstrated on several of these learning networks.;While the crossbars are generally area and energy efficient, the peripheral circuitry to control the read/write logic to the crossbars is extremely power hungry. This work focuses on improving the Ziksa accelerator peripheral circuitry for a spiking reservoir network. The optimized training circuitry for Ziksa includes transmission gates, a control unit, and a current amplifier and is demonstrated within a layer of spiking neurons for training and neuron behavior. All the analog circuits are validated using the Cadence 45 nm GPDK on a 2x4 and 1x4 crossbar. For a 32x32 crossbar, the area and power of the peripheral circuitry is ~2,800 microm2 and ~3.685 mW respectively, demonstrating the overall efficacy of the proposed circuits.
机译:CMOS /忆阻器集成架构已显示出强大的功能,可实现节能型学习机。这些架构最近在油藏计算网络中得到了证明,该网络降低了训练的复杂性和资源利用。在储层计算中,由于隐藏层中的随机权重初始化而减少了训练时间,在初始化过程中,该权重初始化将保持恒定。可以利用CMOS /忆阻器的可变性来生成这些随机权重并减少面积开销。最近的研究表明,CMOS /忆阻器交叉开关非常适合设备上的学习机,包括储层计算网络。在其中一些学习网络上演示了基于CMOS /忆阻器交叉开关的示例设备加速器Ziksa .;虽然交叉开关通常面积小,节能高效,但控制交叉开关的读/写逻辑的外围电路功能极为强大饥饿。这项工作的重点是改善尖峰油藏网络的Ziksa加速器外围电路。用于Ziksa的优化训练电路包括传输门,控制单元和电流放大器,并在尖峰神经元层内进行了训练和神经元行为演示。使用2x4和1x4交叉开关上的Cadence 45 nm GPDK验证了所有模拟电路。对于32x32交叉开关,外围电路的面积和功率分别为〜2,800 microm2和〜3.685 mW,证明了所提出电路的整体功效。

著录项

  • 作者

    Hays, Lydia M.;

  • 作者单位

    Rochester Institute of Technology.;

  • 授予单位 Rochester Institute of Technology.;
  • 学科 Computer engineering.;Electrical engineering.
  • 学位 M.S.
  • 年度 2018
  • 页码 73 p.
  • 总页数 73
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 公共建筑;
  • 关键词

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